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Цитата:
The CAM was fabricated via MOSIS in HP's 2.0-mkm and 1.6-mkm SCMOS and was functional on first silicon. In 1.6 mkm, its peak performance was 5 MIPS at 2 V drawing 5.2 mA of current, 18 MIPS at 5 V drawing 45 mA, and 26 MIPS at 10 V drawing 105 mA. The test results were remarkable not only because of the speed reached on the
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