650V IGBTs Improved for High-Speed Switching Applications

Nov 11, 2016 14:02

Ну транзистор, как транзистор. Не революционный, но вполне нормальные параметры:
Alpha and Omega Semiconductor Limited (AOS) today announced the release of AOK40B65H2AL, the introductory device in the new 650V H2-series IGBT family. The AOK40B65H2AL has been optimized to deliver high-speed switching performance by improving fast turn-off switching in applications such as welding machines, power factor correction and high switching converters.
AOK40B65H2AL specifications include: VCE = 650V; IC = 40A; VCE(SAT) = 2.05V; EOFF = 0.54mJ at TJ = 25 degrees C; tD(OFF) = 117ns, tOFF = 16ns at TJ = 25 degrees C; TJ(max) = 150 degrees C.
“IGBT-driven fast switching converters have been widely used in welding machines, power factor correction, renewable energy applications and so on. Due to higher efficiency, system cost reduction and power quality regulation requirements, the proper selection of the IGBT is crucial to achieving the overall system efficiency robustness, EMI management and long-term reliability,” said Dr. Brian Suh, Vice President of IGBT product line at AOS. The 650V H2-series offers designers the ideal combination for higher efficiency, high ruggedness and EMI performance.

switching, igbt

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