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De-channeling in terms of instantaneous transition rates -- Computer simulations for 855 MeV electrons at (110) planes of diamond: https://arxiv.org/abs/2204.10537
H. Backe
Monte-Carlo simulation calculation have been performed for 855 MeV electrons channeling in (110) planes of a diamond single crystal. The continuum potential picture has been utilized. Both, the transverse potential and the angular distributions of the scattered electrons at screened atoms are based on the Doyle-Turner scattering factors which were extrapolated with the functional dependence of the Molière representation to large momentum transfers. Scattering cross-sections at bound electrons have been derived for energies less than 30 keV from the double differential cross-section as function of both, energy and momentum transfer, taking into account also longitudinal and transverse excitations. For energies above 30 keV the Møller cross-section is used. The dynamics of the particle in the continuum transverse potential has been described classically. Results of the channeling process are presented in terms of instantaneous transition rates as function of the penetration depth, indicating that channeling can be described by a single exponential function only after the equilibration phase has been reached after about 15 μm. As a byproduct, improved drift and diffusion coefficients entering the Fokker-Planck equation have been derived with which its predictive power can be improved.
Апдейт: старик что-то разошелся, на следующий день - еще одна статья:
Beam steering with quasi-mosaic bent silicon single crystals -- Computer simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments: https://arxiv.org/abs/2204.11019
H. Backe
Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons channeling in silicon single crystals at circular bent (111) planes. The aim was to identify critical experimental parameters which effect the volume-deflection and volume-capture characteristics. To these belongs the angular alignment of the crystal with respect to the nominal beam direction. The continuum potential picture has been utilized. The simulation results were compared with experiments. It turns out that the assumption of an anticlastic bending of the crystal, bent on the principle of the quasi-mosaic effect, is not required to reproduce the experimental observations.
H. Backe
Monte-Carlo simulation calculation have been performed for 855 MeV electrons channeling in (110) planes of a diamond single crystal. The continuum potential picture has been utilized. Both, the transverse potential and the angular distributions of the scattered electrons at screened atoms are based on the Doyle-Turner scattering factors which were extrapolated with the functional dependence of the Molière representation to large momentum transfers. Scattering cross-sections at bound electrons have been derived for energies less than 30 keV from the double differential cross-section as function of both, energy and momentum transfer, taking into account also longitudinal and transverse excitations. For energies above 30 keV the Møller cross-section is used. The dynamics of the particle in the continuum transverse potential has been described classically. Results of the channeling process are presented in terms of instantaneous transition rates as function of the penetration depth, indicating that channeling can be described by a single exponential function only after the equilibration phase has been reached after about 15 μm. As a byproduct, improved drift and diffusion coefficients entering the Fokker-Planck equation have been derived with which its predictive power can be improved.
Апдейт: старик что-то разошелся, на следующий день - еще одна статья:
Beam steering with quasi-mosaic bent silicon single crystals -- Computer simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments: https://arxiv.org/abs/2204.11019
H. Backe
Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons channeling in silicon single crystals at circular bent (111) planes. The aim was to identify critical experimental parameters which effect the volume-deflection and volume-capture characteristics. To these belongs the angular alignment of the crystal with respect to the nominal beam direction. The continuum potential picture has been utilized. The simulation results were compared with experiments. It turns out that the assumption of an anticlastic bending of the crystal, bent on the principle of the quasi-mosaic effect, is not required to reproduce the experimental observations.